650V - 50A - IGBT

Features  Trench gate and thin wafer technology (G8H series)  Built in fast recovery diode in one package  Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)  Quality grade: Standard  High speed switching  Non-specification for shor

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