R07DS1381EJ0120

650V - 50A - IGBT

Features Trenchgateandthinwafertechnology(G8Hseries) Builtinfastrecoverydiodeinonepackage Lowcollectortoemittersaturationvoltage VCE(sat)=1.5Vtyp.(atIC=50A,VGE=15V,Ta=25°C) Qualitygrade:Standard Highspeedswitching Non-specificationforshor