40V – 160A – N-channel Power MOS FET

Description The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Super low on-state resistance RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A ) • Low input capacitance Ciss = 8800pF TYP. ( VDS = 25 V ) • Designed for a

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上传：深圳市正纳电子有限公司