首页>R07DS1344EJ0200>规格书详情
R07DS1344EJ0200中文资料瑞萨数据手册PDF规格书
R07DS1344EJ0200规格书详情
Description
The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching
applications.
Features
• Super low on-state resistance
RDS(on) = 1.25 m MAX. ( VGS = 10 V, ID = 80A )
• Low input capacitance
Ciss = 8800pF TYP. ( VDS = 25 V )
• Designed for automotive application and AEC-Q101 qualified
• Pb-free (This product does not contain Pb in the external electrode)
