丝印：R07；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring to IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.47 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：R07；WE-HCMD SMT High Current Flat Wire Inductor

General Information: Ambient Temperature (referring IRP) -40 °C up to +85 °C Operating Temperature -40 °C up to +125 °C Storage Conditions (in original packaging)

文件：675.69 Kbytes 页数：8 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

VOLTAGE REGULATOR

DESCRIPTION As the UTC linear integrated LDO, the UTC R070LD10 shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features are: low dropout voltage, very low ground current. Cause the series have been designed for high current loads, so they are also

文件：352.73 Kbytes 页数：10 Pages

UTC

友顺

VOLTAGE REGULATOR

DESCRIPTION As the UTC linear integrated LDO, the UTC R070LD10 shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features are: low dropout voltage, very low ground current. Cause the series have been designed for high current loads, so they are also

文件：352.73 Kbytes 页数：10 Pages

UTC

友顺

VOLTAGE REGULATOR

DESCRIPTION As the UTC linear integrated LDO, the UTC R070LD10 shows a high current, high accuracy, low-dropout voltage which built in on/off function. The features are: low dropout voltage, very low ground current. Cause the series have been designed for high current loads, so they are also

文件：352.73 Kbytes 页数：10 Pages

UTC

友顺

Other Protistor® Fuses Ferrule Fuses 27x60 URQ/URS/URB - 690 V to 1000 VAC

EXTREMELY HIGH IBREAKING CAPACITY FUSES: PROTECTION OF POWER SEMI CONDUCTORS ACCORDING TO IEC STANDARD 60269.1 AND 4 690 V - 1000 V AC VOLTAGE RATING aR-CLASS ACCORDING TO VDE 636-23 AND IEC 60269.4 690V URQ and 1000V URB are UL RECOGNIZED

文件：403.9 Kbytes 页数：4 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Integrated Driver - MOS FET (DrMOS)

Description The R2J20657CNP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip a

文件：316.61 Kbytes 页数：16 Pages

RENESAS

瑞萨

Integrated Driver - MOS FET (DrMOS)

Description The R2J20608NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip al

文件：326.06 Kbytes 页数：17 Pages

RENESAS

瑞萨

Integrated Driver - MOS FET (DrMOS)

Description The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this device suitable for large-current buck converters. The chip al

文件：337.59 Kbytes 页数：18 Pages

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瑞萨

Silicon Schottky Barrier Diode for Rectifying

Features  Low forward voltage drop and suitable for high efficiency rectifying.  Ultra small Resin Package (TURP-FM) is suitable for compact and high-density surface mount design.

文件：190.53 Kbytes 页数：6 Pages

RENESAS

瑞萨