R07DS0666EJ0100中文资料瑞萨数据手册PDF规格书

Description

The R2J20609NP multi-chip module incorporates a high-side MOS FET, low-side MOS FET, and MOS-FET driver in

a single QFN package. The on and off timing of the power MOS FET is optimized by the built-in driver, making this

device suitable for large-current buck converters. The chip also incorporates a high-side bootstrap switch, eliminating

the need for an external SBD for this purpose.

Features

 Based on Intel 8  8 DrMOS Specification.

 Built-in power MOS FET suitable for Desktop, Server, Notebook application.

 Low-side MOS FET with built-in SBD for lower loss and reduced ringing.

 Built-in driver circuit which matches the power MOS FET

 Built-in tri-state input function which can support a number of PWM controllers

 High-frequency operation (above 1 MHz) possible

 VIN operating-voltage range: 27 Vmax

 Large average output current (Max.50 A)

 Achieve low power dissipation

 Controllable driver: Remote on/off

 Low-side MOS FET disabled function for DCM operation

 Double thermal protection: Thermal Warning & Thermal Shutdown

 Built-in bootstrapping Switch

 Small package: QFN56 (8 mm  8 mm  0.95 mm)

 Terminal Pb-free/Halogen-free