750 W, 65 V, 1.2 – 1.4 GHz, GaN RF Input-Matched Transistor

Key Features • Frequency Range: 1.2 to 1.4 GHz • Linear Gain1: 19.8 dB • Output Power (P3dB)1: 838.5 W • Drain Efficiency (P3dB)1: 67.3 • Operating Voltage: 65 V • CW and Pulse capable

文件：1.74948 Mbytes 页数：16 Pages

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750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

Key Features Frequency Range: 1.2 to 1.4 GHz Linear Gain1: 19.8 dB Output Power (P3dB)1: 838.5 W Drain Efficiency (P3dB)1: 67.3 Operating Voltage: 65 V CW and Pulse capable

文件：1.75047 Mbytes 页数：16 Pages

QORVO

威讯联合

750 W, 65 V, 1.2 ??1.4 GHz, GaN RF Input-Matched Transistor

Key Features Frequency Range: 1.2 to 1.4 GHz Linear Gain1: 19.8 dB Output Power (P3dB)1: 838.5 W Drain Efficiency (P3dB)1: 67.3 Operating Voltage: 65 V CW and Pulse capable

文件：1.75047 Mbytes 页数：16 Pages

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Dual-Use GPS L1/L2 Dual Filter

Key Features • Usable Bandwidth 24 MHz • Low Insertion Loss:

文件：608.61 Kbytes 页数：11 Pages

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