1200 um Discrete GaAs pHEMT

Key Features • Frequency: DC – 20 GHz • Output Power (P1dB)1: 31 dBm • Typical Gain1: 11 dB • Typical PAE1dB 1: 57% • Noise Figure1: 1 dB • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.54 x 0.10 mm

文件：1.07908 Mbytes 页数：10 Pages

QORVO

威讯联合

DC - 20 GHz, 1200 um Discrete GaAs pHEMT Die

Qorvo's QPD2120D is a discrete 1200-micron pHEMT which operates from DC to 20 GHz. The QPD2120D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating condition • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 31 dBm\n• Typical Gain at 12 GHz: 11 dB\n• Typical PAE at 12 GHz: 57%\n• Typical NF at 12 GHz: 1 dB\n• No Vias\n• Technology: 0.25 um GaAs pHEMT\n• Chip Dimensions: 0.41 x 0.54 x 0.10 mm;

Qorvo

威讯联合

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