Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 250A Surge Rating ● Glass to metal construction ● VRRM to 1600V

文件：129.34 Kbytes 页数：2 Pages

Microsemi

美高森美

Standard Rectifier (trr more than 500ns)

22A,200V-1600V Standard Recovery Rectifier inDO-4 package

Microchip

微芯科技

包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：RECTIFIER

Microchip

微芯科技

丝印：R2120302P；Package：HTSSOP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.75129 Mbytes 页数：66 Pages

TI

德州仪器

丝印：R2120302P；Package：HTSSOP；TPS7H1111-SP and TPS7H1111-SEP 1.5-A, Ultra-Low Noise, High PSRR Radiation Hardened Low Dropout (LDO) Linear Regulator

1 Features • Total ionizing dose (TID) characterized – Radiation hardness assurance (RHA) availability of 100 krad(Si) or 50 krad(Si) • Single-Event Effects (SEE) characterized – Single-event latchup (SEL), single-event burnout (SEB), and single-event gate rupture (SEGR) immune up to linear

文件：3.75277 Mbytes 页数：68 Pages

TI

德州仪器