400 um Discrete GaAs pHEMT

Key Features • Frequency: DC – 20 GHz • Output Power (P1dB)1: 26 dBm • Typical Gain1: 13 dB • Typical PAE1dB 1: 55% • Noise Figure1: 1.1 dB • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.34 x 0.10 mm

文件：1.04218 Mbytes 页数：10 Pages

QORVO

威讯联合

DC - 20 GHz, 400 um Discrete GaAs pHEMT Die

Qorvo's QPD2040D is a discrete 400-micron pHEMT which operates from DC to 20 GHz. The QPD2040D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 26 dBm\n• Typical Gain at 12 GHz: 13 dB\n• Typical PAE at 12 GHz: 55%\n• Typical NF at 12 GHz: 1.1 dB\n• No Vias\n• Technology: 0.25 um GaAs pHEMT\n• Chip Dimensions: 0.41 x 0.34 x 0.10 mm;

Qorvo

威讯联合

Silicon Power Rectifier

Silicon Power Rectifier ● Glass Passivated Die ● Low Forward Voltage ● 200A Surge Rating ● Glass to metal construction ● VRRM to 1200V ● Excellent reliability

文件：112.14 Kbytes 页数：3 Pages

Microsemi

美高森美

Silicon Power Rectifier

文件：143.29 Kbytes 页数：2 Pages

Microsemi

美高森美

915.0 MHz SAW Filter

文件：505.42 Kbytes 页数：10 Pages

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