250 um Discrete GaAs pHEMT

Key Features • Frequency: DC – 20 GHz • Output Power (P1dB)1: 24 dBm • Typical Gain1: 14 dB • Typical PAE1dB 1: 58% • Noise Figure1: 0.9 dB • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.34 x 0.10 mm

文件：1.00122 Mbytes 页数：10 Pages

QORVO

威讯联合

DC - 20 GHz, 250 um Discrete GaAs pHEMT Die

Qorvo's QPD2025D is a discrete 250-micron pHEMT which operates from DC to 20 GHz. The QPD2025D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 24 dBm\n• Typical Gain at 12 GHz: 14 dB\n• Typical PAE at 12 GHz: 58%\n• Typical NF at 12 GHz: 0.9 dB\n• No Vias\n• Technology: 0.25 um GaAs pHEMT\n• Chip Dimensions: 0.41 x 0.34 x 0.10 mm;

Qorvo

威讯联合

High precision I2C-Bus Real-Time Clock Module

文件：563.76 Kbytes 页数：47 Pages

Ricoh

理光

High precision I2C-Bus Real-Time Clock Module

文件：563.76 Kbytes 页数：47 Pages

Ricoh

理光

Low-Drift, Low-Power, Dual-Output, VREF and VREF / 2 Voltage References

文件：2.47843 Mbytes 页数：33 Pages

TI

德州仪器