首页>PXAD184218FV-V1>规格书详情
PXAD184218FV-V1中文资料High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz数据手册MACOM规格书
| 厂商型号 |
PXAD184218FV-V1 |
| 参数属性 | PXAD184218FV-V1 封装/外壳为H-37275G-6/2；包装为卷带（TR）；类别为分立半导体产品的晶体管-FETMOSFET-射频；产品描述：IC AMP RF LDMOS H-37275G-6 |
| 功能描述 | High Power RF LDMOS FET 420 W; 28 V; 1805 - 1880 MHz |
| 封装外壳 | H-37275G-6/2 |
| 制造商 | MACOM Tyco Electronics |
| 数据手册 | |
| 更新时间 | 2025-12-11 12:02:00 |
| 人工找货 | PXAD184218FV-V1价格和库存，欢迎联系客服免费人工找货 |
PXAD184218FV-V1规格书详情
描述 Description
The PXAD184218FV is a 420-watt (P3dB) LDMOS FET with an asymmetrical design intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include dual-path design; input and output matching; high gain and thermally-enhanced package with earless flanges. Manufactured with an advanced LDMOS process; this device provides excellent thermal performance and superior reliability.
特性 Features
·Broadband internal input and output matching
·Asymmetrical Doherty design: Main P1dB = 130 W Typ; Peak P1dB = 290 W Typ
·Typical Pulsed CW performance; 1842.5 MHz; 28 V; Doherty configuration: Output power at P3dB = 420 W; Efficiency = 62%; Gain = 14 dB
·Capable of handling 10:1 VSWR @ 28 V; 110 W (WCDMA) output power
·Integrated ESD protection
·Pb-free; RoHS compliant
应用 Application
·Multi-standard Cellular Power Amplifiers
技术参数
- 制造商编号
：PXAD184218FV-V1
- 生产厂家
：MACOM
- Min Frequency (MHz)
：1805
- Max Frequency(MHz)
：1880
- P3dB Output Power(W)
：420
- Gain(dB)
：16.0
- Efficiency(%)
：52
- Operating Voltage(V)
：28
- Package Category
：Earless
- Form
：Packaged Discrete Transistor
- Technology
：LDMOS
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