PXAC241702FCV1中文资料Cellular (2300 MHz to 2700 MHz)数据手册Infineon规格书

描述 Description

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz

特性 Features

·Asymmetrical Doherty design - Main: P1dB = 60 W Typ - Peak: P1dB = 90 W Typ
·Broadband internal input and output matching
·Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration - Output power at P1dB = 100 W - Efficiency = 49% - Gain = 17.5 dB
·Integrated ESD protection: Human Body Model, Class 1C (per JESD22-A114)
·Capable of handling 10:1 VSWR @28 V, 120 W (CW) output power
·Low thermal resistance
·Pb-free and RoHS compliant