Cellular (2300 MHz to 2700 MHz)

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 – 2400 MHz ·Asymmetrical Doherty design - Main: P1dB = 60 W Typ - Peak: P1dB = 90 W Typ\n ·Broadband internal input and output matching\n ·Typical pulsed CW performance, 2350 MHz, 28 V, Doherty configuration - Output power at P1dB = 100 W - Efficiency = 49% - Gain = 17.5 dB\n ·Integrated ESD protection:;

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz

文件：1.20615 Mbytes 页数：10 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz

文件：1.20615 Mbytes 页数：10 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz

文件：1.20615 Mbytes 页数：10 Pages

Infineon

英飞凌

Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 2300 ??2400 MHz

文件：1.20615 Mbytes 页数：10 Pages

Infineon

英飞凌