Strong Lead Attachment

文件：613.8 Kbytes 页数：2 Pages

LSTD

莱尔德

High Power RF LDMOS Field Effect Transistor 10 W, 2110 ??2170 MHz

Description The PTF210101M is an unmatched 10-watt GOLDMOS® FET intended for class AB base station applications in the 2110 to 2170 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint. Features • Typical WCDMA performance - Average ou

文件：276.3 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 30 W, 2110-2170 MHz

Description The PTF210301 is a 30 W, internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical two–carrier WCDMA performance - Average out

文件：337.85 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance

文件：406.9 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 45 W, 2110-2170 MHz

Description The PTF210451 is a 45 W internally matched GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier WCDMA performance

文件：406.9 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA perfo

文件：266.34 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 2110-2170 MHz

Description The PTF210901 is an internally matched 90 W GOLDMOS FET intended for WCDMA applications from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Internal matching for wideband performance • Typical two–carrier 3GPP WCDMA perfo

文件：266.34 Kbytes 页数：8 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

Description The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal

文件：449.03 Kbytes 页数：9 Pages

INFINEON

英飞凌