LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：205.95 Kbytes 页数：10 Pages

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LDMOSRF Power Field Effect Transistor 90 W, 869–960 MHz

Description\nThe PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. • Broadband internal matching\n• Typical EDGE performance\n- Average output power = 45 W\n- Gain = 18 dB\n- Efficiency = 40%\n• Typical CW performance\n- Output power at P–1dB = 120 W\n- Gain = 17 dB\n- Efficiency = 60%\n• Integrated ESD protection: Human Body Model, Class 1 (minimum)\n• Exc;

Infineon

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：205.95 Kbytes 页数：10 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：205.95 Kbytes 页数：10 Pages

INFINEON

英飞凌