LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：205.95 Kbytes 页数：10 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：205.95 Kbytes 页数：10 Pages

INFINEON

英飞凌

LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz

Description The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability. Features • Broadband internal matching • Typical EDGE performance - Average output

文件：205.95 Kbytes 页数：10 Pages

INFINEON

英飞凌

OMRON/欧姆龙

上传：深圳市英创达电子半导体有限公司

EUT-6

TI/德州仪器

上传：深圳市坤融电子科技有限公司