50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor

Description The PTF 10015 is a 50 Watt LDMOS FET intended for large signal amplifier applications from 300 to 960 MHz. It operates at 55 efficiency and 13.0 dB of gain. Nitride surface passivation and full gold metallization are used to ensure excellent device lifetime and reliability. Features

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ERICSSON

爱立信

50 Watts, 300?60 MHz GOLDMOS Field Effect Transistor

Ericsson

爱立信

Low IR Schottky Barrier Diode 15V, 1.0A Rectifier

15V, 1.0A Rectifier Features • Small switching noise • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm) Applications • High frequency rectification (switching regulators

文件：42.2 Kbytes 页数：3 Pages

SANYO

三洋

Schottky Barrier Diode

Schottky Barrier Diode 15V, 1A, Low IR, Single MCPH3 Features • Small switching noise • Halogen free compliance • Low leakage current and high reliability due to highly reliable planar structure • Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm) Appl

文件：748.2 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

15V, 1.0A Rectifi er

文件：475.76 Kbytes 页数：6 Pages

SANYO

三洋