PTF081301F资料datasheet下载库存现货-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
PTF081301F	文件：289.44 Kbytes Page：11 Pages	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliab 文件：289.44 Kbytes 页数：11 Pages	INFINEON 英飞凌	INFINEON
PTF081301F	文件：300 bytes Page：1 Pages	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz	Infineon 英飞凌	Infineon
LPA-C081301S-X	文件：59.99 Kbytes Page：1 Pages	3mm, 8 UNIT, VERTICAL SMT LIGHT PIPE 文件：59.99 Kbytes 页数：1 Pages	LUMEX	LUMEX
PTF081301E	文件：289.44 Kbytes Page：11 Pages	Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz Description The PTF081301E and PTF081301F are 130-watt, internally-matched GOLDMOS FETs intended for EDGE and CDMA applications in the 869 to 960 MHz bands. Thermally-enhancedpackaging provides the coolest operation available. Full gold metallization ensures excellent device lifetime and reliab 文件：289.44 Kbytes 页数：11 Pages	INFINEON 英飞凌	INFINEON

更多PTF081301F供应商更新时间2026-4-17 15:33:00