PTF080901F中文资料LDMOSRF Power Field Effect Transistor 90 W, 869–960 MHz数据手册Infineon规格书

描述 Description

The PTF080901 is a 90 W, internally matched GOLDMOS FET intended for EDGE and CDMA applications in the 860 to 960 MHz band. Full gold metallization ensures excellent device lifetime and reliability.

特性 Features

• Broadband internal matching
• Typical EDGE performance
- Average output power = 45 W
- Gain = 18 dB
- Efficiency = 40%
• Typical CW performance
- Output power at P–1dB = 120 W
- Gain = 17 dB
- Efficiency = 60%
• Integrated ESD protection: Human Body Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 90 W (CW) output power