PTF080101M数据手册分立半导体产品的晶体管-FETMOSFET-射频规格书PDF

描述 Description

The PTF080101M is an unmatched 10-watt GOLDMOS® FETintended for class AB base station applications in the 450 MHz to 960 MHz band. This LDMOS device offers excellent gain, efficiency and linearity performance in a small footprint.

特性 Features

• Typical EDGE performance
  - Average output power = 5.0 W
  - Gain = 19 dB
  - Efficiency = 37%
  - EVM = 2.0%
• Typical CW performance
  - Output Power at P–1dB = 12.5 W
  - Gain = 18 dB
  - Efficiency = 50%
• Integrated ESD protection: Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 10 W (CW) output power
• Pb-free and RoHS compliant

简介

PTF080101M属于分立半导体产品的晶体管-FETMOSFET-射频。由制造生产的PTF080101M晶体管 - FET，MOSFET - 射频射频晶体管、FET 和 MOSFET 是具有三个端子的半导体器件，器件中电流受电场控制。该系列器件用于涉及射频的设备。用于放大或切换信号或功率的晶体管类型包括：E-pHEMT、LDMOS、MESFET、N 沟道、P 沟道、pHEMT、碳化硅、2 N 沟道和 4 N 沟道。