PSMN5R6-100YSFQ

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：PSMN5R6-100YSF/SOT1023/4 LEADS

PSMN5R6-100BS

N-channel100V5.6mΩstandardlevelMOSFETinD2PAK

1.1Generaldescription StandardlevelN-channelMOSFETinaSOT404packagequalifiedto175°C.This productisdesignedandqualifiedforuseinawiderangeofindustrial,communications anddomesticequipment. 1.2Featuresandbenefits Highefficiencyduetolowswitching andconductio

PSMN5R6-100BS

N-channel100V5.6m廓standardlevelMOSFETinD2PAKRev.1??20March2012

PSMN5R6-100BS

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=5.6mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC

PSMN5R6-100PS

N-channel100V5.6mΩstandardlevelMOSFETinTO220

1.1Generaldescription StandardlevelN-channelMOSFETinaTO-220packagequalifiedto175°C.This productisdesignedandqualifiedforuseinawiderangeofindustrial,communications anddomesticequipment. 1.2Featuresandbenefits •Highefficiencyduetolowswitchingandconduction

PSMN5R6-100PS

N-channel100V5.6m廓standardlevelMOSFET

PSMN5R6-100PS

N-channel100V5.6m廓standardlevelMOSFETinTO220

PSMN5R6-100XS

N-channel100V5.6m廓standardlevelMOSFETinTO220F(SOT186A)