N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK

1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications. 1.2 Features and benefits High efficiency due to low swi

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NEXPERIA

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N-channel 8.3 m廓 30 V TrenchMOS logic level FET in LFPAK

文件：337.78 Kbytes 页数：14 Pages

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N-channel 30 V 7.9 mΩ logic level MOSFET in LFPAK using NextPower technology

1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits  High reliability Power SO8 package, qualified to 175°C  L

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安世

N-channel 8.3 m廓 30 V TrenchMOS logic level FET in LFPAK

文件：337.78 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel 30 V 7.9 m廓 logic level MOSFET in LFPAK using NextPower technology

文件：254.1 Kbytes 页数：15 Pages

恩XP

N-channel 8.3 mΩ 30 V TrenchMOS logic level FET in LFPAK

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in industrial and communications applications.

Nexperia

安世