isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 92A@ TC=25℃ ·Drain Source Voltage -VDSS= 60V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 7.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel 60 V 7.8 m廓 standard level MOSFET in D2PAK

General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. Features and benefits ■ High efficiency due to low switching and conduction losses ■

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NEXPERIA

安世

N-Channel Enhancement Mode MOSFET

Application « Adaptor » Charger '« Power management © SMPS Standby Power |

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TECHPUBLIC

台舟电子

N-channel 60 V 7.8 m standard level MOSFET in D2PAK

文件：229.64 Kbytes 页数：14 Pages

PHI

PHI

N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK

Standard level N-channel MOSFET in a D2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and conduction losses\n• Robust construction for demanding applications\n• Standard level gate;

Nexperia

安世