isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 70A@ TC=25℃ ·Drain Source Voltage -VDSS= 120V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

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ISC

无锡固电

N-channel 120 V 6.7 m廓 standard level MOSFET in TO-220

文件：744.04 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel 120 V 6.7 m廓 standard level MOSFET in TO-220

文件：274.28 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel 120 V 6.7 m廓 standard level MOSFET in TO-220

文件：274.28 Kbytes 页数：12 Pages

PHI

飞利浦

N-channel 120 V 6.7 mΩ standard level MOSFET in TO-220

Standard level N-channel MOSFET in TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic power supply equipment. • High efficiency due to low switching and conduction losses\n• Improved dynamic avalanche performance\n• Suitable for standard level gate drive\n• TO-220 package can be mounted to heatsink;

Nexperia

安世