丝印：PSMN7R0-100PS；Package：SOT78；N-channel 100V 6.8 mΩ standard level MOSFET in TO220.

1. General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits • High efficiency due to low switching and conduction losses

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NEXPERIA

安世

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 100A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 6.8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.2 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 100V 6.8 m廓 standard level MOSFET in TO220

文件：252.6 Kbytes 页数：16 Pages

恩XP

N-channel 100V 6.8 m廓 standard level MOSFET in TO220.

文件：268.93 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel 100V 6.8 mΩ standard level MOSFET in TO220.

Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. • High efficiency due to low switching and conduction losses\n• Improved dynamic avalanche performance\n• Suitable for standard level gate drive;

Nexperia

安世