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PMDPB85UPE中文资料20 V dual P-channel Trench MOSFET数据手册Nexperia规格书
PMDPB85UPE规格书详情
描述 Description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
特性 Features
• Low threshold voltage
• Very fast switching
• Trench MOSFET technology
• 2 kV ElectroStatic Discharge (ESD) protection
应用 Application
• Relay driver
• High-speed line driver
• High-side load switch
• Switching circuits
技术参数
- 制造商编号
:PMDPB85UPE
- 生产厂家
:Nexperia
- Package name
:DFN2020-6
- Product status
:Production
- Channel type
:P
- Nr of transistors
:2
- VDS [max] (V)
:-20
- VGS [max] (V)
:8
- RDSon [max] @ VGS = 4.5 V (mΩ)
:103
- RDSon [max] @ VGS = 2.5 V (mΩ)
:146
- integrated gate-source ESD protection diodes
:Y
- VESD HBM (V)
:2000
- Tj [max] (°C)
:150
- ID [max] (A)
:-3.7
- QGD [typ] (nC)
:1
- QG(tot) [typ] @ VGS = 4.5 V (nC)
:5.4
- Ptot [max] (W)
:0.515
- VGSth [typ] (V)
:-0.7
- Automotive qualified
:N
- Ciss [typ] (pF)
:514
- Coss [typ] (pF)
:78
- Release date
:2012-06-20
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Nexperia(安世) |
24+ |
DFN6(2x2) |
7350 |
现货供应,当天可交货!免费送样,原厂技术支持!!! |
询价 | ||
NEXPERIA/安世 |
24+ |
NA/ |
24250 |
原厂直销,现货供应,账期支持! |
询价 | ||
NEXPERIA/安世 |
24+ |
原厂原封可拆样 |
65258 |
百分百原装现货,实单必成 |
询价 | ||
NEXPERIA |
24+ |
DFN6 |
12000 |
原装正品 假一罚十 可拆样 |
询价 | ||
恩XP |
23+ |
原包装原封 □□ |
31470 |
原装进口特价供应 特价,原装元器件供应,支持开发样品 更多详细咨询 库存 |
询价 | ||
NEXPERIA |
24+ |
DFN6 |
5000 |
全新原装正品,现货销售 |
询价 | ||
NEXPERIA/安世 |
22+ |
SOT1118 |
10990 |
原装正品 |
询价 | ||
恩XP |
23+ |
DFN20206 |
9000 |
原装正品,支持实单 |
询价 | ||
Nexperia USA Inc. |
2022+ |
6-HUSON-EP(2x2) |
38550 |
全新原装 支持表配单 中国著名电子元器件独立分销 |
询价 | ||
NEXPERIA/安世 |
2447 |
SOT1118 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 |