300 V, 100 mA NPN high-voltage transistor

General description NPN high-voltage transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. PNP complement: PMBTA92. Features ■ High voltage (max. 300 V) Applications ■ Telephony and professional communication equipment

文件：218.03 Kbytes 页数：9 Pages

恩XP

丝印：W3；Package：SOT23；400 V, 0.3 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 400 V) 3. Applications • LED driver for LED chain module • LCD backlighting

文件：1.10788 Mbytes 页数：10 Pages

NEXPERIA

安世

400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

General description PN high-voltage low VCEsatBreakthrough In Small Signal (BISS) transistor in a OT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qualified Applications LED driver for LED chain mod

文件：103.58 Kbytes 页数：12 Pages

恩XP

丝印：W3；Package：SOT23；400 V, 0.3 A NPN high-voltage low VCEsat transistor

1. General description NPN high-voltage low VCEsat transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Low current (max. 300 mA) • High voltage (max. 400 V) • Qualified according to AEC-Q101 and recommended for use in automotive a

文件：243.6 Kbytes 页数：10 Pages

NEXPERIA

安世

丝印：LK；Package：SOT23；500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat H

文件：265.97 Kbytes 页数：14 Pages

NEXPERIA

安世

500 V, 150 mA NPN high-voltage low VCEsat transistor

General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability I

文件：152.3 Kbytes 页数：13 Pages

恩XP

丝印：2G；Package：SOT23；PNP general purpose transistor

1. General description PNP general-purpose transistor in a small SOT23 plastic package. NPN complement: PMBTA06. 2. Features and benefits • High current (max. 500 mA) • Low voltage (max. 80 V). 3. Applications • General purpose switching and amplification, e.g. telephony and professional

文件：669.04 Kbytes 页数：9 Pages

NEXPERIA

安世

PNP general purpose transistor

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: PMBTA06. FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment.

文件：102.41 Kbytes 页数：6 Pages

恩XP

PNP general purpose transistor

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: PMBTA06. FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment.

文件：50.13 Kbytes 页数：6 Pages

PHI

PHI

PNP general purpose transistor

DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complement: PMBTA06. FEATURES • High current (max. 500 mA) • Low voltage (max. 80 V). APPLICATIONS • General purpose switching and amplification, e.g. telephony and professional communication equipment.

文件：59.49 Kbytes 页数：7 Pages

PHI

PHI