BAT165A-Q

Marking：2G；Package：SOD323；40 V, 0.75 A medium power Schottky barrier rectifier

1.Generaldescription MediumpowerSchottkybarrierrectifierwithanintegratedguardringforstressprotection, encapsulatedinaverysmallSOD323(SC-76)Surface-MountedDevice(SMD)plasticpackage. 2.Featuresandbenefits •Forwardcurrent:IF≤0.75A •Reversevoltage:VR≤40V

BC850C

Marking：2G；Package：SOT23；NPN general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Generalpurposeswitchingandamplification. DESCRIPTION NPNtransistorinaSOT23plasticpackage.PNPcomplements:BC859andBC860.

BC850CW

Marking：2G；Package：SOT323；NPN general purpose transistors

FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V).

BC850S-B

Marking：2G；Package：SOT-23；General Purpose Transistors

GeneralPurposeTransistors NPNSilicon •MoistureSensitivityLevel:1 •ESDRating–HumanBodyModel:>4000V –MachineModel:>400V

BZX884S-B4V3

Marking：2G；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

BZX884S-B4V3-Q

Marking：2G；Package：DFN1006BD-2；Voltage regulator diodes

1.Generaldescription General-purposeZenerdiodesinanultrasmallSOD882BD(DFN1006BD-2)leadlessSurface MountedDevice(SMD)plasticpackagewithside-wettableflanks. 2.Featuresandbenefits •Leadlessultrasmallplasticpackagewithside-wettableflankssuitableforsurface-mounted

FMMTA56

Marking：2G；Package：SOT-23；PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES *Gainof50atIC=100mA

FMMTA56

Marking：2G；Package：SOT-23；SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES *Gainof50atIC=100mA

KST56

Marking：2G；Package：SOT-23；Driver Transistor

DriverTransistor •Collector-EmitterVoltage:VCEO=KST55:-60VKST56:-80V •CollectorPowerDissipation:PC(max)=350mW •ComplementtoKST05/06

PBSS4230PAN

Marking：2G；Package：DFN2020-6；30 V, 2 A NPN/NPN low VCEsat (BISS) transistor

1.Generaldescription NPN/NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistorinaleadless mediumpowerDFN2020-6(SOT1118)Surface-MountedDevice(SMD)plasticpackage. NPN/PNPcomplement:PBSS4230PANP.PNP/PNPcomplement:PBSS5230PAP. 2.Featuresandbenefits •Verylowcollec