丝印：2G；Package：SOD323；40 V, 0.75 A medium power Schottky barrier rectifier

1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.75 A • Reverse voltage: VR ≤ 40 V

文件：226.38 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2G；Package：SOT23；NPN general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V). APPLICATIONS •General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complements: BC859 and BC860.

文件：356.32 Kbytes 页数：9 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2G；Package：SOT323；NPN general purpose transistors

FEATURES •Low current (max. 100 mA) •Low voltage (max. 45 V).

文件：330.41 Kbytes 页数：8 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2G；Package：SOT-23；General Purpose Transistors

General Purpose Transistors NPN Silicon • Moisture Sensitivity Level: 1 • ESD Rating – Human Body Model: >4000 V – Machine Model: >400 V

文件：277.78 Kbytes 页数：6 Pages

FS

丝印：2G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：328.92 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2G；Package：DFN1006BD-2；Voltage regulator diodes

1. General description General-purpose Zener diodes in an ultra small SOD882BD (DFN1006BD-2) leadless Surface Mounted Device (SMD) plastic package with side-wettable flanks. 2. Features and benefits • Leadless ultra small plastic package with side-wettable flanks suitable for surface-mounted

文件：329.42 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：2G；Package：SOT-23；PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Gain of 50 at IC =100mA

文件：37.26 Kbytes 页数：1 Pages

Zetex

丝印：2G；Package：SOT-23；SOT23 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * Gain of 50 at IC =100mA

文件：57.8 Kbytes 页数：1 Pages

Zetex

丝印：2G；Package：SOT-23；Driver Transistor

Driver Transistor • Collector-Emitter Voltage: VCEO = KST55: - 60V KST56: - 80V • Collector Power Dissipation: PC (max) = 350mW • Complement to KST05/06

文件：44.97 Kbytes 页数：3 Pages

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

丝印：2G；Package：DFN2020-6；30 V, 2 A NPN/NPN low VCEsat (BISS) transistor

1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4230PANP. PNP/PNP complement: PBSS5230PAP. 2. Features and benefits • Very low collec

文件：752.18 Kbytes 页数：17 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司