AMBTA92Q-7

Marking：2G2；Package：SOT23；300V PNP SMALL SIGNAL TRANSISTOR IN SOT23

Features BVCEO>-300V IdealforMediumPowerAmplificationandSwitching ComplementaryNPNType:MMBTA42Q TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) QualifiedtoAEC-Q101StandardsforHighReliability PPAPCapabl

BC850C

Marking：2Gs；Package：SOT-23；NPN Silicon AF Transistors

•ForAFinputstagesanddriverapplications •Highcurrentgain •Lowcollector-emittersaturationvoltage •Lownoisebetween30Hzand15kHz •Complementarytypes: BC856...-BC860...(PNP) •Pb-free(RoHScompliant)package1) •QualifiedaccordingAECQ101

BC850CW

Marking：2Gs；Package：SOT-323；NPN Silicon AF Transistors

NPNSiliconAFTransistors ●ForAFinputstagesanddriverapplications ●Highcurrentgain ●Lowcollector-emittersaturationvoltage ●Lownoisebetween30Hzand15kHz ●Complementarytypes:BC856W,BC857W,BC858W,BC859W,BC860W(PNP)

BC850CW

Marking：2G-；Package：SOT-323；NPN general purpose transistors

DESCRIPTION NPNtransistorinaSOT323plasticpackage. PNPcomplements:BC859WandBC860W. FEATURES •Lowcurrent(max.100mA) •Lowvoltage(max.45V). APPLICATIONS •Lownoisestagesintaperecorders,hi-fiamplifiersandotheraudio-frequencyequipment.

CLVC2G101WBQBRQ1

Marking：2G101Q；Package：WQFN；SN74LVC2G101-Q1 Automotive Dual D-Type Flip-Flop with Configurable Multiple-Function Gated Clock

1Features •AEC-Q100qualifiedforautomotiveapplications: –Devicetemperaturegrade1:-40°Cto+125°C –DeviceHBMESDclassificationlevel2 –DeviceCDMESDclassificationlevelC4B •Operatingrangefrom1.1Vto3.6V •Over-voltagetolerantinputssupportupto5.5V independentofV

DXTP07040CFG-7

Marking：2G5；Package：PowerDI3333-8；40V PNP LOW VCESAT TRANSISTOR IN POWERDI3333-8

Features BVCEO>-40V SmallFormFactorThermallyEfficientPackage. EnablesHigherDensityEndProducts IC=-3AHighContinuousCurrent ICM=-6APeakPulseCurrent LowSaturationVoltageVCE(sat)

JFE150DBVR

Marking：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features •Ultra-lownoise: –Voltagenoise: •0.8nV/√Hzat1kHz,IDS=5mA •0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz •Lowgatecurrent:10pA(max) •Lowinputcapacitance:24pFatVDS=5V •Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

JFE150DBVT

Marking：2GLW；Package：SOT-23；JFE150 Ultra-Low-Noise, Low-Gate-Current, Audio, N-Channel JFET

1Features •Ultra-lownoise: –Voltagenoise: •0.8nV/√Hzat1kHz,IDS=5mA •0.9nV/√Hzat1kHz,IDS=2mA –Currentnoise:1.8fA/√Hzat1kHz •Lowgatecurrent:10pA(max) •Lowinputcapacitance:24pFatVDS=5V •Highgate-to-drainandgate-to-sourcebreakdown voltage:–4

MMBTA56

Marking：2GM；Package：SOT-23；PNP General Purpose Transistor

FEATURES •Epitaxialplanardieconstruction. •ComplementaryNPNtypesavailable(MMBTA05/MMBTA06) APPLICATIONS •IdealformediumNPNamplificationandswitching.

MMBTA56

Marking：2GM；Package：SOT-23；SOT-23 Plastic-Encapsulate Transistors

FEATURES GeneralPurposeAmplifierApplications