丝印：2G；Package：SOD323；40 V, 0.75 A medium power Schottky barrier rectifier

1. General description Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Forward current: IF ≤ 0.75 A • Reverse voltage: VR ≤ 40 V

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NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

40 V, 0.75 A medium power Schottky barrier rectifier

Medium power Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a very small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. • Forward current: IF ≤ 0.75 A\n• Reverse voltage: VR ≤ 40 V\n• Low forward voltage typ. VF = 640 mV\n• Low reverse current typ. IR = 1.5 µA\n• Very small SMD plastic package\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

SCHOTTKY BARRIER DIODE

Features • Medium current schottky rectifier diode Applications • For low-loss, fast-recovery, meter protection, bias isolation and clamping applications

文件：223.35 Kbytes 页数：3 Pages

SEMTECH_ELEC

先之科半导体

Plastic Medium Power Silicon NPN Transistor

Plastic Medium Power Silicon NPN Transistor 1.5 AMPERE POWER TRANSISTORS NPN SILICON 45, 60, 80 VOLTS 20 WATTS . . . designedfor use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. • DC Current Gain — hFE= 40 (Min) @ IC= 0.15 Adc • BD 165, 169

文件：110.04 Kbytes 页数：4 Pages

Motorola

摩托罗拉

SILIZIUM-NPN-EPITAXIAL-PLANAR-LEISTUNGSTRANSISTOREN SILICON NPN EPITAXIAL PLANAR POWRE TRANSISTORS

文件：149.63 Kbytes 页数：4 Pages

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