PMBTA45

500 V, 150 mA NPN high-voltage low VCEsat transistor

Generaldescription NPNhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorinaSOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackage. Featuresandbenefits ■Highvoltage ■Lowcollector-emittersaturationvoltageVCEsat ■HighcollectorcurrentcapabilityI

PMBTA45

Marking：LK；Package：SOT23；500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

1.1Generaldescription NPNhigh-voltagelowVCEsatBreakthroughInSmallSignal(BISS)transistorina SOT23(TO-236AB)smallSurface-MountedDevice(SMD)plasticpackage. PNPcomplement:PBHV9050T. 1.2Featuresandbenefits Highvoltage Lowcollector-emittersaturationvoltageVCEsat H

PMBTA45_15

500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

PMBTA45,215

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 500V 0.15A TO236AB

Nexperia USA Inc.