500 V, 150 mA NPN high-voltage low VCEsat transistor

General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. Features and benefits ■ High voltage ■ Low collector-emitter saturation voltage VCEsat ■ High collector current capability I

文件：152.3 Kbytes 页数：13 Pages

恩XP

丝印：LK；Package：SOT23；500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T. 1.2 Features and benefits High voltage Low collector-emitter saturation voltage VCEsat H

文件：265.97 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

文件：152.3 Kbytes 页数：13 Pages

PHI

飞利浦

500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. PNP complement: PBHV9050T. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• AEC-Q101 qualified;

Nexperia

安世

500 V, 150 mA NPN high-voltage low VCEsat transistor

NPN high-voltage low VCEsat transistor in a SOT23 small Surface-Mounted Device (SMD) plastic package. • High voltage\n• Low collector-emitter saturation voltage VCEsat\n• High collector current capability IC and ICM\n• High collector current gain (hFE) at high IC\n• Qualified according to AEC-Q101 and recommended for use in automotive applications;

Nexperia

安世

Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 500V 0.15A TO236AB

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司