丝印：-2X；Package：SOT-23；NPN switching transistor

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NPN switching transistor

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400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

文件：103.58 Kbytes 页数：12 Pages

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400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor

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500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor

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PNP high-voltage transistor

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NPN switching transistors

NPN switching transistors in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. • High current (max. 600 mA)\n• Low voltage (max. 40 V)\n• AEC-Q101 qualified;

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40 V, 600 mA NPN switching transistor

NPN switching transistor in an ultra small DFN1006-3 (SOT883) leadless Surface-Mounted Device (SMD) plastic package.\n PNP complement: PMBT2907AM • High current (max. 600 mA)\n• Low voltage (max. 40V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.50 mm\n• Power dissipation comparable to SOT23;

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40 V, 600 mA NPN switching transistor

NPN switching transistor in an ultra small DFN1006B-3 (SOT883B) leadless Surface-Mounted Device (SMD) plastic package.\n PNP complement: PMBT2907AMB • High current (max. 600 mA)\n• Low voltage (max. 40V)\n• Leadless ultra small SMD plastic package\n• Low package height of 0.37 mm\n• Power dissipation comparable to SOT23;

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Package：TO-236-3，SC-59，SOT-23-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 30V 0.6A TO236AB

Nexperia USA Inc.