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EMB16N06A

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06CS

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06G

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID6.7A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06H

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID42A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

EMB16N06V

N?륝hannelLogicLevelEnhancementModeFieldEffectTransistor

ProductSummary: BVDSS60V RDSON(MAX.)16mΩ ID15A UIS,Rg100Tested Pb‐FreeLeadPlating&HalogenFree

EXCELLIANCEExcelliance MOS Corp.

杰力科技杰力科技股份有限公司

FTP16N06N

N-ChannelEnhancement

InPowerProductLines

ETC1List of Unclassifed Manufacturers

etc未分类制造商未分类制造商

NP16N06QLK

DualN-channelPowerMOSFET

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NP16N06YLL

60V??16A??N-channelPowerMOSFETApplication:Automotive

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

PJD16N06A

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJD16N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features RDS(ON),VGS@10V,ID@8A

PANJITPANJIT International Inc.

强茂強茂股份有限公司

RFD16N06

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LE

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFD16N06LESM

16A,60V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseareN-ChannelpowerMOSFETsmanufacturedusingamodernprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance. Features •16A,60V •rDS(ON)=0.047Ω •TemperatureCompensati

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFD16N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFD16N06SM

16A,60V,0.047Ohm,N-ChannelPowerMOSFET

Description TheseN-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.ThisprocesswhichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchas

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

供应商型号品牌批号封装库存备注价格
PANJIT/强茂
23+
TO-252
50000
全新原装正品现货,支持订货
询价
PANJIT/强茂
22+
TO-252
1215
原装现货假一赔十
询价
PANJIT-强茂
24+25+/26+27+
TO-252-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
Panjit International Inc.
23+
SMD
67000
原装正品实单可谈 库存现货
询价
23+
N/A
76800
一级代理放心采购
询价
原厂
21+
N/A
10000
只做现货
询价
原厂
21+
N/A
10000
只做现货
询价
PANJIT
21+
原厂封装
310
25条原装现货真实库存特价
询价
SIS
23+
QFP
1004
全新原装现货
询价
金升阳
900
询价
更多PJD16N06AMOS(场效应管)供应商 更新时间2024-6-24 11:00:00