60 V – 16 A – Dual N-channel Power MOS FET

NP16N06QLK is a dual N-channel MOS Field Effect Transistor designed for high current switching applications. • Super low on-state resistance RDS(on)1 = 39 mΩ MAX. (VGS = 10 V, ID = 8 A) RDS(on)2 = 60 mΩ MAX. (VGS = 4.5 V, ID = 4 A)\n• Low Ciss: Ciss = 500 pF TYP. (VDS = 25 V)\n• Designed for automotive application and AEC-Q101 qualified\n• Small size package 8-pin HSON dual;

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Dual N-channel Power MOS FET

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60 V ??16 A ??N-channel Power MOS FET Application: Automotive

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60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V,ID@8A

文件：464.2 Kbytes 页数：8 Pages

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60V N-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@10V, ID@8A

文件：431.14 Kbytes 页数：7 Pages

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