丝印：4G；Package：SC-74；50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description NPN/NPN Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. PNP/PNP complement: PIMP32-Q NPN/PNP complement: PIMC32-Q 2. Features and benefits • 500 mA output current capability • Built-in bias resistors

文件：260.69 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：4F；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31 NPN/PNP complement: PIMC31 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：268.82 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：4F；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN31 NPN/PNP complement: PIMC31 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：270.35 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：4J；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32 NPN/PNP complement: PIMC32 2. Features and benefits • 500 mA output current capability • Built-in bias resistors •

文件：265.78 Kbytes 页数：11 Pages

NEXPERIA

安世

丝印：4J；Package：SC-74；50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ

1. General description PNP/PNP Resistor-Equipped double Transistor (RET) in a small SOT457 (SC-74) Surface- Mounted Device (SMD) plastic package. NPN/NPN complement: PIMN32-Q NPN/PNP complement: PIMC32-Q 2. Features and benefits • 500 mA output current capability • Built-in bias resistors

文件：267.35 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：M1；Package：SC-74；PNP general purpose double transistor

FEATURES •600 mW total power dissipation •Low current (max. 100 mA) •Low voltage (max. 40 V) •Reduces number of components and required PCB area •Reduced pick and place costs.

文件：279.91 Kbytes 页数：7 Pages

NEXPERIA

安世

PNP general purpose double transistor

DESCRIPTION PNP transistor pair in an SC-74 (SOT457) plastic package. FEATURES • 600 mW total power dissipation • Low current (max. 100 mA) • Low voltage (max. 40 V) • Reduces number of components and required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switchi

文件：47.3 Kbytes 页数：8 Pages

PHI

飞利浦

PNP general purpose double transistor

DESCRIPTION PNP transistor pair in an SC-74 (SOT457) plastic package. FEATURES • 600 mW total power dissipation • Low current (max. 100 mA) • Low voltage (max. 40 V) • Reduces number of components and required PCB area • Reduced pick and place costs. APPLICATIONS • General purpose switchi

文件：105.12 Kbytes 页数：6 Pages

恩XP

i.MX 8M Mini Applications Processor Datasheet for Industrial Products

Features - Arm Cortex-A53 MPCore platform Quad symmetric Cortex-A53 processors • 32 KB L1 Instruction Cache • 32 KB L1 Data Cache • Media Processing Engine (MPE) with NEON technology supporting the Advanced Single Instruction Multiple Data architecture: • Floating Point Unit (FPU) with supp

文件：2.75585 Mbytes 页数：96 Pages

恩XP

i.MX 8M Mini Applications Processor Datasheet for Industrial Products

Features - Arm Cortex-A53 MPCore platform Quad symmetric Cortex-A53 processors • 32 KB L1 Instruction Cache • 32 KB L1 Data Cache • Media Processing Engine (MPE) with NEON technology supporting the Advanced Single Instruction Multiple Data architecture: • Floating Point Unit (FPU) with supp

文件：2.75585 Mbytes 页数：96 Pages

恩XP