丝印：M1；Package：DO-214AC；Surface Mount General Purpose Silicon Rectifiers

Features For surface mounted applications Low profile package Glass passivated chip junction Easy to pick and place Lead free in comply with EU RoHS 2011/65/EU directives

文件：2.22862 Mbytes 页数：4 Pages

UNSEMI

优恩半导体

丝印：M1；Package：SOT89；20 V, 3 A PNP low VCEsat (BISS) transistor

Features * Low collector-emitter saturation voltage VCEsat * High collector current capability IC and ICM * High collector current gain (hFE) at high IC * High efficiency due to less heat generation * Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

文件：719.74 Kbytes 页数：13 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：M1；Package：fSV；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NAND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V

文件：181.25 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M1；Package：USV；CMOS Digital Integrated Circuits Silicon Monolithic

1. Functional Description • 2-Input NAND Gate 2. Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.5 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to

文件：180.52 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M1；Package：XSON6；CMOS Digital Integrated Circuits Silicon Monolithic

Functional Description • 2-Input NAND Gate Features (1) Wide operating temperature range: Topr = -40 to 125 (2) High output current: ±8.0 mA (min) at VCC = 3.0 V (3) Super high speed operation: tpd = 2.9 ns (typ.) at VCC = 3.3 V, CL = 15 pF (4) Operating voltage range: VCC = 0.9 to 3.6 V (

文件：199.71 Kbytes 页数：10 Pages

TOSHIBA

东芝

丝印：M1；Package：MSOP；Craft Port™ Tiny RS-232 Transceiver for Portable Applications

FEATURES 460 kbit/s Transmission Rate Single 5 V Power Supply Compatible with RS-232 Input/Output Levels 0.1 μF Charge Pump Capacitors One Driver and One Receiver On-Board DC-DC Converter ±4.2 V Output Swing with 5 V Supply Low Power BiCMOS: 500 μA ICC Ultralow Power (1 μA) Shutdown Mode

文件：200.05 Kbytes 页数：12 Pages

AD

亚德诺

丝印：M1；Package：MSOP；Craft Port™ Tiny RS-232 Transceiver for Portable Applications

FEATURES 460 kbit/s Transmission Rate Single 5 V Power Supply Compatible with RS-232 Input/Output Levels 0.1 μF Charge Pump Capacitors One Driver and One Receiver On-Board DC-DC Converter ±4.2 V Output Swing with 5 V Supply Low Power BiCMOS: 500 μA ICC Ultralow Power (1 μA) Shutdown Mode

文件：200.05 Kbytes 页数：12 Pages

AD

亚德诺

丝印：M1；Package：MSOP；Craft Port™ Tiny RS-232 Transceiver for Portable Applications

FEATURES 460 kbit/s Transmission Rate Single 5 V Power Supply Compatible with RS-232 Input/Output Levels 0.1 μF Charge Pump Capacitors One Driver and One Receiver On-Board DC-DC Converter ±4.2 V Output Swing with 5 V Supply Low Power BiCMOS: 500 μA ICC Ultralow Power (1 μA) Shutdown Mode

文件：200.05 Kbytes 页数：12 Pages

AD

亚德诺

丝印：M1；Package：MSOP；Craft Port™ Tiny RS-232 Transceiver for Portable Applications

FEATURES 460 kbit/s Transmission Rate Single 5 V Power Supply Compatible with RS-232 Input/Output Levels 0.1 μF Charge Pump Capacitors One Driver and One Receiver On-Board DC-DC Converter ±4.2 V Output Swing with 5 V Supply Low Power BiCMOS: 500 μA ICC Ultralow Power (1 μA) Shutdown Mode

文件：200.05 Kbytes 页数：12 Pages

AD

亚德诺

丝印：M1；Package：TSSOP6；NPN/NPN matched double transistor

1. General description NPN/NPN matched double transistor in a SOT363 (SC-88) very small Surface-Mounted Device (SMD) plastic package. The transistors are fully isolated internally. PNP/PNP complement: BMC857BS Matched version of: BC847BS 2. Features and benefits • Current gain matching •

文件：242.85 Kbytes 页数：10 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司