丝印：M18N03Z；Package：PDFN33；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM18N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

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