M1F

Marking：M1F；Package：SMAF；Surface Mount General Purpose Rectifier M1F Through M7F

Features Lowprofilepackage Idealforautomatedplacement Glasspassivatedchipjunction Highforwardsurgecapability MeetsMSLlevel1,perJ-STD-020,LFmaximumpeak of260°C

MMBT5550

Marking：M1F；Package：SOT-23；NPN General Purpose Amplifier

FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Highvoltagetransistors. ●Generalpurposeapplication.

MMBT5550

Marking：M1F；Package：SOT-23；High Voltage Transistors

HighVoltageTransistors FEATURE ●Wedeclarethatthematerialofproduct compliancewithRoHSrequirements.

MMBT5550

Marking：M1F；Package：SOT-23；NPN General Purpose Amplifier

FEATURES ●Epitaxialplanardieconstruction. ●Ultra-smallsurfacemountpackage. APPLICATIONS ●Highvoltagetransistors. ●Generalpurposeapplication.

MMBT5550

Marking：M1F；Package：SOT-23；NPN Silicon

NPNSilicon

MMBT5550

Marking：M1F；Package：SOT-23；NPN General Purpose Amplifier

S-MMBT5550

Marking：M1F；Package：SOT-23；High Voltage Transistors

S-MMBT5551

Marking：M1F；Package：SOT-23；High Voltage Transistors

M1F80M12W2-1LA

Marking：M1F80M12W2-1LA；Package：ACEPACK-DMT-32；Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC

Features •AQG324qualified •1200Vblockingvoltage •78mΩoftypicalRDS(on) •MaximumoperatingjunctiontemperatureTJ=175°C •DBCCu-AlN-Cubasedsubstratetoimprovethermalperformance •Isolationvoltage3kV •IntegratedNTCtemperaturesensor Applications •Onboardchar