丝印：M1F80M12W2-1LA；Package：ACEPACK-DMT-32；Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC

Features • AQG 324 qualified • 1200 V blocking voltage • 78 mΩ of typical RDS(on) • Maximum operating junction temperature TJ = 175 °C • DBC Cu-AlN-Cu based substrate to improve thermal performance • Isolation voltage 3 kV • Integrated NTC temperature sensor Applications • On board char

文件：3.55656 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：M1F80M12W2-1LA；Package：ACEPACK-DMT-32；Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC

Features • AQG 324 qualified • 1200 V blocking voltage • 78 mΩ of typical RDS(on) • Maximum operating junction temperature TJ = 175 °C • DBC Cu-AlN-Cu based substrate to improve thermal performance • Isolation voltage 3 kV • Integrated NTC temperature sensor Applications • On board char

文件：3.55656 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体