丝印：M1F；Package：SMAF；Surface Mount General Purpose Rectifier M1F Through M7F

Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.41915 Mbytes 页数：3 Pages

RFE

RFE international

丝印：M1F；Package：SOT-23；NPN General Purpose Amplifier

FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● High voltage transistors. ● General purpose application.

文件：200.89 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M1F；Package：SOT-23；High Voltage Transistors

High Voltage Transistors FEATURE ● We declare that the material of product compliance with RoHS requirements.

文件：634.91 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：M1F；Package：SOT-23；NPN General Purpose Amplifier

FEATURES ● Epitaxial planar die construction. ● Ultra-small surface mount package. APPLICATIONS ● High voltage transistors. ● General purpose application.

文件：653.69 Kbytes 页数：3 Pages

LUGUANG

鲁光电子

丝印：M1F；Package：SOT-23；NPN Silicon

NPN Silicon

文件：1.21903 Mbytes 页数：4 Pages

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

丝印：M1F；Package：SOT-23；NPN General Purpose Amplifier

文件：170.67 Kbytes 页数：4 Pages

BILIN

银河微电

丝印：M1F；Package：SOT-23；High Voltage Transistors

文件：586.76 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：M1F；Package：SOT-23；High Voltage Transistors

文件：586.76 Kbytes 页数：5 Pages

LEIDITECH

雷卯电子

丝印：M1F80M12W2-1LA；Package：ACEPACK-DMT-32；Automotive‑grade ACEPACK DMT‑32 power module, fourpack topology, 1200 V, 78 mΩ typ. SiC Power MOSFET with NTC

Features • AQG 324 qualified • 1200 V blocking voltage • 78 mΩ of typical RDS(on) • Maximum operating junction temperature TJ = 175 °C • DBC Cu-AlN-Cu based substrate to improve thermal performance • Isolation voltage 3 kV • Integrated NTC temperature sensor Applications • On board char

文件：3.55656 Mbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：M1F；Package：SMAF；Surface Mount General Purpose Rectifier M1F Through M7F

Features Low profile package Ideal for automated placement Glass passivated chip junction High forward surge capability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C

文件：2.41915 Mbytes 页数：3 Pages

RFE

RFE international