丝印：M18N03Z；Package：PDFN33；N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM18N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

文件：1.02127 Mbytes 页数：6 Pages

ADV

爱德微

MOSFET

ADV

爱德微

30V N-CHANNEL ENHANCEMENT MODE MOSFET

Application 3.3V MCU Drive Load switch Uninterruptible power supply

文件：1.74341 Mbytes 页数：5 Pages

YFWDIODE

佑风微

N-Channel Enhancement Mode Field Effect Transistor

文件：688.25 Kbytes 页数：6 Pages

YANGJIE

扬杰电子