CPDT-18VUB-HF

Marking：M18；Package：SOT-23；SMD ESD Protection Diode

Features -Workingvoltages:3.3V~36V -Lowleakagecurrent. -Lowclampingvoltage. -IEC61000-4-2(ESD)±15kV(air),±8kV(contact). -IEC61000-4-4(EFT)40A(5/50ns). -Protectsonebidirectionallineortwo unidirectionallines. -350Wpeakpulsepowerper(tp=8/20μs).

ESD18V23T-2A

Marking：M18；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature 320~450WattsPeakPulsePowerperLine(tp=8/20μs) Protectsonebidirectionallineortwounidirectionallines Lowclampingvoltage Lowleakagecurrent IEC61000-4-4(EFT)40A(5/50ηs) IEC61000-4-2(ESD)±30kV(air),±30kV(contact):3.3V~15V IEC61000-4-2(ESD)±20kV(air),±20kV

ESD18V23TS-2A

Marking：M18；Package：SOT-23；Transient Voltage Suppressors for ESD Protection

Feature MoistureSensitivityLevel(MSL-1) AEC-Q101qualified 320~450WattsPeakPulsePowerperLine(tp=8/20μs) Protectsonebidirectionallineortwounidirectionallines LowClampingVoltage WorkingVoltages:3.3V~36V Lowleakagecurrent IEC61000-4-4(EFT):40A(5/50ηs) IEC61000-4-2

SM18

Marking：M18；Package：SOT-23；TVS Diode Array

DESCRIPTION TheSMxxSeriesisdesignedforapplications requiringtransientovervoltageprotection capability.Theyareintendedforuseinvoltageand ESDsensitiveequipmentsuchascomputers, printers,businessmachines,communication systems,medicalequipmentandother applications.T

SM18

Marking：M18；Package：SOT-23；TVS Diode Array

DESCRIPTION TheSMxxSeriesisdesignedforapplications requiringtransientovervoltageprotection capability.Theyareintendedforuseinvoltageand ESDsensitiveequipmentsuchascomputers, printers,businessmachines,communication systems,medicalequipmentandother applications.T

SM18

Marking：M18；Package：SOT-23；TVS Diode Array

DESCRIPTION TheSMxxSeriesisdesignedforapplications requiringtransientovervoltageprotection capability.Theyareintendedforuseinvoltageand ESDsensitiveequipmentsuchascomputers, printers,businessmachines,communication systems,medicalequipmentandother applications.T

TEPM15

Marking：M18；Package：SOT-23；TVS Diode Array

ADM18N03Z

Marking：M18N03Z；Package：PDFN33；N-Channel Enhancement Mode Field Effect Transistor

Features: ●LowGateChargeforFastSwitchingApplication ●LowRDS(ON)toMinimizeConductiveLoss ●100%EASGuaranteed ●OptimizedV(BR)DSSRuggedness ●GreenDeviceAvailable Description: TheADM18N03ZusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withl