AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICAL CHARACTERISTICS ✔ Hermetically Sealed Glass to Metal Sub-Assemblies (PHP) ✔ Sub-Assemblies are Packaged in Molded Epoxy Case (PIP) ✔ Weight 46 grams (Approximate) ✔ Flammability rating UL 94V-0 ✔ Device Marking: Logo & Part Number ✔ Screening Available Upon Request - The PHP &

文件：61.55 Kbytes 页数：4 Pages

PROTEC

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：994.63 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.31 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP80N06LT is sup

文件：72.66 Kbytes 页数：9 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：66.16 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.75 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel 60 V (D-S) MOSFET

FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization:

文件：994.62 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 75A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.55 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS??logic level FET

Description N-channel logic level field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PHP82NQ03LT in SOT78 (TO-220AB) PHB82NQ03LT in SOT404 (D2-PAK) PHD82NQ03LT in SOT428 (D-PAK). Features ■ Logic level compatible ■ Low gate charge

文件：274.03 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP83N03LT in a SOT78 (TO-220AB) PHB83N03LT in a SOT404 (D2-PAK) PHE83N03LT in a SOT226 (I2-PAK). Features ■ Low on-state resistance ■ Fast s

文件：308.19 Kbytes 页数：15 Pages

PHI

飞利浦