型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 9A@ TC=25℃ ·Drain Source Voltage -VDSS= 200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.16Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control 文件:373 Kbytes 页数:2 Pages | ISC 无锡固电 | ISC | ||
N-channel TrenchMOS transistor VDSS = 200 V ID = 8.7 A RDS(ON) ≤ 400 mΩ GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor using Trench technology, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits a 文件:110.93 Kbytes 页数:12 Pages | PHI 飞利浦 | PHI | ||
High Power Thin Film Wraparound Chip Resistor AEC-Q200 Qualified FEATURES • AEC-Q200 qualified • ESD rating 5A (HBM) • Moisture resistant • High purity ceramic substrate • Power rating to 2.5 W • Resistance range 10 Ω to 30.1 kΩ • Resistor tolerance to ± 0.1 • TCR to ± 25 ppm/°C • Flame resistant UL 94 V-0 • Material categorization: for definitions o 文件:123.03 Kbytes 页数:5 Pages | VishayVishay Siliconix 威世 | Vishay | ||
Hybrid Power Module Hybrid Power Module Integrated Power Stage for 230 VAC Motor Drives This module integrates a 3–phase inverter and 3–phase rectifier in a single convenient package. It is designed for 2.0 hp motor drive applications at frequencies up to 15 kHz. The inverter incorporates advanced EM–Series insulat 文件:124.76 Kbytes 页数:5 Pages | Motorola 摩托罗拉 | Motorola | ||
Hybrid Power Module Hybrid Power Module Integrated Power Stage for 2.0 hp 460 VAC Motor Drive This module integrates a 3–phase inverter, 3–phase rectifier, brake, and temperature sense in a single convenient package. It is designed for 2.0 hp general purpose 3–phase induction motor drive applications. The inverter 文件:163.8 Kbytes 页数:6 Pages | Motorola 摩托罗拉 | Motorola | ||
LED MR16 Lamp Product Description The Cree LM16 delivers up to 620 lumens while achieving over 68 lumens per watt. The LM16 LED MR16 lamp is available in a variety of beam angles with a color temperature of 3000K. Designed to halogen MR16 lamp standards, the LM16 LED lamp imitates the size, appearance and l 文件:387.25 Kbytes 页数:3 Pages | Cree 科锐 | Cree | ||
丝印:0406NAB;Package:SOT669;40 V, 6 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60406PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin 文件:286.82 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:0406PAB;Package:SOT669;40 V, 6 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60406NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • 文件:280.88 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:0410NAB;Package:SOT669;40 V, 10 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed 文件:719.31 Kbytes 页数:15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:0410NAB;Package:SOT669;40 V, 10 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60410PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin 文件:284.7 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA |
技术参数
- Breakdown Voltage V(BR) Volts:
200.00
- Clamping Voltage VC Volts:
319.00
- Peak Current IPP Amps:
47.00
- Leakage Current @ VWM µA:
250.00
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHI |
TSSOP1 |
99+ |
37 |
全新原装进口自己库存优势 |
询价 | ||
PHI |
00+ |
SMD8 |
82 |
全新原装100真实现货供应 |
询价 | ||
PHI |
13+ |
TO-220AB |
3894 |
原装分销 |
询价 | ||
ST |
10+ |
SMD-8 |
7800 |
全新原装正品,现货销售 |
询价 | ||
PHI |
25+ |
SOP-8P |
4897 |
绝对原装!现货热卖! |
询价 | ||
PHI |
23+ |
SOP-8 |
7000 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
PHI |
24+ |
SOP-8P |
1000 |
现货 |
询价 | ||
PHL |
25+ |
TSSOP |
18000 |
原厂直接发货进口原装 |
询价 | ||
PHI |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
PHL |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 |
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