丝印：1003NPK；Package：LFPAK56D；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK PNP/PNP complement: PHPT610030PK 2. Features and benefits • High thermal power dissipation capability • Suitable

文件：334.68 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：1003NPK；Package：SOT1205；NPN/PNP high power double bipolar transistor

1. General description NPN/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK-Q PNP/PNP complement: PHPT610030PK-Q 2. Features and benefits • High thermal power dissipation capability • Suit

文件：335.63 Kbytes 页数：18 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10030PK；Package：SOT1205；PNP/PNP high power double bipolar transistor

1. General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. 2. Features and benefits • High thermal power dissipation capability • Suitab

文件：727.83 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP/PNP high power double bipolar transistor

General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. Features and benefits • High thermal power dissipation capability •

文件：248.43 Kbytes 页数：15 Pages

恩XP

PNP/PNP high power double bipolar transistor

General description PNP/PNP high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface Mounted Device (SMD) power plastic package. NPN/NPN complement: PHPT610030NK. NPN/PNP complement: PHPT610030NPK. Features and benefits • High thermal power dissipation capability •

文件：248.43 Kbytes 页数：15 Pages

恩XP

NPN/NPN high power double bipolar transistor

General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK. NPN/PNP complement: PHPT610035NPK. Features and benefits • Current gain matching 5 •

文件：250.85 Kbytes 页数：16 Pages

恩XP

丝印：10035NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK. PNP/PNP complement: PHPT610035PK NPN/PNP complement: PHPT610035NPK 2. Features and benefits • Current gain matchi

文件：280.81 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10035NK；Package：SOT1205；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030NK-Q. PNP/PNP complement: PHPT610035PK-Q NPN/PNP complement: PHPT610035NPK-Q 2. Features and benefits • Current gain

文件：281.21 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PNP/PNP matched high power double bipolar transistor

1. General description PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. Matched version of PHPT610030PK. NPN/NPN complement: PHPT610035NK. 2. Features and benefits • Current gain matching 10 • High thermal powe

文件：728.01 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：10035PK；Package：SOT1205；PNP/PNP matched high power double bipolar transistor

1. General description PNP/PNP high power matched double bipolar transistor in a SOT1205 (LFPAK56D) Surface- Mounted Device (SMD) power plastic package. Matched version of PHPT610030PK-Q. NPN/NPN complement: PHPT610035NK-Q. 2. Features and benefits • Current gain matching 10 % • High t

文件：281.19 Kbytes 页数：14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司