型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
---|---|---|---|---|
丝印:1003NAB;Package:SOT669;100 V, 3 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • 文件:285.73 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1006NAB;Package:SOT669;100 V, 6 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed 文件:717.53 Kbytes 页数:15 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1006NAB;Package:SOT669;100 V, 6 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin 文件:281.96 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1006PAB;Package:SOT669;100 V, 6 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed 文件:717.88 Kbytes 页数:16 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1006PAB;Package:SOT669;100 V, 6 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin 文件:279.23 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1010NAB;Package:SOT669;100 V, 10 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed 文件:720.78 Kbytes 页数:16 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1010NAB;Package:SOT669;100 V, 10 A NPN high power bipolar transistor 1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin 文件:283.89 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1010PAB;Package:SOT669;100 V, 10 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Re 文件:719.8 Kbytes 页数:16 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
丝印:1010PAB;Package:SOT669;100 V, 10 A PNP high power bipolar transistor 1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • 文件:281.36 Kbytes 页数:14 Pages | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
F - Rugged Push-Pull 文件:71.98 Kbytes 页数:3 Pages | LEMO 雷莫 | LEMO |
技术参数
- Breakdown Voltage V(BR) Volts:
200.00
- Clamping Voltage VC Volts:
319.00
- Peak Current IPP Amps:
47.00
- Leakage Current @ VWM µA:
250.00
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHI |
TSSOP1 |
99+ |
37 |
全新原装进口自己库存优势 |
询价 | ||
PHI |
00+ |
SMD8 |
82 |
全新原装100真实现货供应 |
询价 | ||
PHI |
13+ |
TO-220AB |
3894 |
原装分销 |
询价 | ||
ST |
10+ |
SMD-8 |
7800 |
全新原装正品,现货销售 |
询价 | ||
PHI |
25+ |
SOP-8P |
4897 |
绝对原装!现货热卖! |
询价 | ||
PHI |
23+ |
SOP-8 |
7000 |
绝对全新原装!现货!特价!请放心订购! |
询价 | ||
PHI |
24+ |
SOP-8P |
1000 |
现货 |
询价 | ||
PHL |
25+ |
TSSOP |
18000 |
原厂直接发货进口原装 |
询价 | ||
PHI |
24+ |
SOP |
6980 |
原装现货,可开13%税票 |
询价 | ||
PHL |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 |
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