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PHPT61003NY-Q

丝印:1003NAB;Package:SOT669;100 V, 3 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61003PY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件:285.73 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61006NY

丝印:1006NAB;Package:SOT669;100 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件:717.53 Kbytes 页数:15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61006NY-Q

丝印:1006NAB;Package:SOT669;100 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61006PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件:281.96 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61006PY

丝印:1006PAB;Package:SOT669;100 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件:717.88 Kbytes 页数:16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61006PY-Q

丝印:1006PAB;Package:SOT669;100 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61006NY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件:279.23 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61010NY

丝印:1010NAB;Package:SOT669;100 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed

文件:720.78 Kbytes 页数:16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61010NY-Q

丝印:1010NAB;Package:SOT669;100 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61010PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件:283.89 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61010PY

丝印:1010PAB;Package:SOT669;100 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Re

文件:719.8 Kbytes 页数:16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHPT61010PY-Q

丝印:1010PAB;Package:SOT669;100 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件:281.36 Kbytes 页数:14 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

PHP.0F.302.XLK

F - Rugged Push-Pull

文件:71.98 Kbytes 页数:3 Pages

LEMO

雷莫

LEMO

技术参数

  • Breakdown Voltage V(BR) Volts:

    200.00

  • Clamping Voltage VC Volts:

    319.00

  • Peak Current IPP Amps:

    47.00

  • Leakage Current @ VWM µA:

    250.00

供应商型号品牌批号封装库存备注价格
PHI
TSSOP1
99+
37
全新原装进口自己库存优势
询价
PHI
00+
SMD8
82
全新原装100真实现货供应
询价
PHI
13+
TO-220AB
3894
原装分销
询价
ST
10+
SMD-8
7800
全新原装正品,现货销售
询价
PHI
25+
SOP-8P
4897
绝对原装!现货热卖!
询价
PHI
23+
SOP-8
7000
绝对全新原装!现货!特价!请放心订购!
询价
PHI
24+
SOP-8P
1000
现货
询价
PHL
25+
TSSOP
18000
原厂直接发货进口原装
询价
PHI
24+
SOP
6980
原装现货,可开13%税票
询价
PHL
23+
TO-220
5000
原装正品,假一罚十
询价
更多PHP供应商 更新时间2025-10-11 17:49:00