60 V, 6 A NPN high power bipolar transistor

General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printed Circuit

文件：244.71 Kbytes 页数：16 Pages

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丝印：0606NAB；Package：SOT669；60 V, 6 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60606PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：286.24 Kbytes 页数：14 Pages

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丝印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Re

文件：718.32 Kbytes 页数：15 Pages

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丝印：0606PAB；Package：SOT669；60 V, 6 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60606NY-Q 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C •

文件：281.2 Kbytes 页数：14 Pages

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丝印：0610NAB；Package：LFPAK56；60 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printe

文件：271.47 Kbytes 页数：13 Pages

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安世

丝印：0610NAB；Package：SOT669；60 V, 10 A NPN high power bipolar transistor

1. General description NPN high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT60610PY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：283.74 Kbytes 页数：14 Pages

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安世

丝印：0610PAB；Package：LFPAK56；60 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Printe

文件：269.29 Kbytes 页数：13 Pages

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丝印：0610PAB；Package：SOT669；60 V, 10 A PNP high power bipolar transistor

1. General description PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT60610NY-Q 2. Features and benefits • High thermal power dissipation capability • High temperature applications up to 175 °C • Reduced Prin

文件：281.16 Kbytes 页数：14 Pages

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丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. PNP/PNP complement: PHPT610030PK NPN/PNP complement: PHPT610030NPK 2. Features and benefits • High thermal power dissipation capability • Suitabl

文件：280.2 Kbytes 页数：14 Pages

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丝印：10030NK；Package：LFPAK56D；NPN/NPN high power double bipolar transistor

1. General description NPN/NPN high power double bipolar transistor in a SOT1205 (LFPAK56D) Surface-Mounted Device (SMD) power plastic package. 2. Features and benefits • High thermal power dissipation capability • Suitable for high temperature applications up to 175 °C • Reduced Printed-C

文件：283.28 Kbytes 页数：14 Pages

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