isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 66A@ TC=25℃ ·Drain Source Voltage -VDSS= 25V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.61 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS logic level FET

General description Logic level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology Features ■ Logic level threshold ■ Low on-state resistance. Applications ■ DC-to-DC converters ■ General purpose switching.

文件：96.22 Kbytes 页数：13 Pages

恩XP

N-channel TrenchMOS transistor

Description N-channel logic level field-effect power transistor in a plastic package using TrenchMOS™1 technology. Product availability: PHP66NQ03LT in SOT78 (TO-220AB) PHB66NQ03LT in SOT404 (D2-PAK) PHD66NQ03LT in SOT428 (D-PAK) Features ■ Low on-state resistance ■ Fast switching

文件：301.04 Kbytes 页数：14 Pages

PHI

飞利浦

N-channel TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’technology • Very low on-state resistance • Fast switching • Low thermal resistance • Logic level compatible Appl

文件：108.44 Kbytes 页数：11 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 69A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 14mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.26 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.81 Kbytes 页数：8 Pages

PHI

飞利浦

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

文件：53.42 Kbytes 页数：7 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6.3A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.54Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.71 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 6A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.5Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.56 Kbytes 页数：2 Pages

ISC

无锡固电

PowerMOS transistors Avalanche energy rated

GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.V. and computer monitor power supplies, d.c. to d.c. converters, motor control circuits and general purpose switching applications. The PHP6N50E is supplied

文件：77.79 Kbytes 页数：9 Pages

PHI

飞利浦