ac power bus voltage suppressor

Description The PHP and PIP Series of devices are designed in accordance with DOD-STD-1399, section 300 interface standard and MIL-STD704A for shipboard systems, electrical power and alternating current. When large voltage transients endanger voltage sensitive components, this series provides r

文件：377.49 Kbytes 页数：5 Pages

PROTEC

AC POWER BUS VOLTAGE SUPPRESSOR

MECHANICAL CHARACTERISTICS ✔ Hermetically Sealed Glass to Metal Sub-Assemblies (PHP) ✔ Sub-Assemblies are Packaged in Molded Epoxy Case (PIP) ✔ Weight 46 grams (Approximate) ✔ Flammability rating UL 94V-0 ✔ Device Marking: Logo & Part Number ✔ Screening Available Upon Request - The PHP &

文件：61.55 Kbytes 页数：4 Pages

PROTEC

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 58A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.76 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP60N06LT is su

文件：71.01 Kbytes 页数：9 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：64.319 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 68.9A@ TC=25℃ ·Drain Source Voltage -VDSS= 30V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 17.7mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：373.03 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 63A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 16mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：371.72 Kbytes 页数：2 Pages

ISC

无锡固电

TrenchMOS transistor Logic level FET

GENERAL DESCRIPTION N-channel enhancement mode, logic level, field-effect power transistor in a plastic envelope using ’trench’ technology. The device has very low on-state resistance. It is intended for use in dc to dc converters and general purpose switching applications. The PHP65N06LT is sup

文件：71.46 Kbytes 页数：9 Pages

PHI

飞利浦

TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：64.629 Kbytes 页数：8 Pages

PHI

飞利浦

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 63A@ TC=25℃ ·Drain Source Voltage -VDSS= 55V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 18mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.2 Kbytes 页数：2 Pages

ISC

无锡固电