TrenchMOS transistor Standard level FET

GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope using ’trench’ technology. The device features very low on-state resistance and has integral zener diodes giving ESD protection up to 2kV. It is intended for use in DC-DC converters a

文件：59.7 Kbytes 页数：8 Pages

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PHI

isc N-Channel MOSFET Transistor

FEATURES Drain Current -ID= 45A@ TC=25℃ Drain Source Voltage -VDSS= 30V(Min) Static Drain-Source On-Resistance -RDS(on) = 24mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.19 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.06 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. FEATURES • ’Trench’ technology • Very low on-state resistance • Fast switching • Low thermal resistance Applications:- • d.c. to d.c. converters • switched mode po

文件：108.77 Kbytes 页数：11 Pages

PHI

PHI

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits 

文件：864.75 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits L

文件：855.92 Kbytes 页数：12 Pages

NEXPERIA

安世

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. Features and benefits ■ Lo

文件：379.38 Kbytes 页数：12 Pages

恩XP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 47A@ TC=25℃ ·Drain Source Voltage -VDSS= 105V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.16 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 150V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 42mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

文件：372.37 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel TrenchMOS standard level FET

General description Standard level N-channel enhancement mode field effect transistor in a plastic package using TrenchMOS™ technology. Features ■ Low on-state resistance ■ Fast switching ■ Low thermal resistance ■ Low gate charge. Applications ■ DC-to-DC primary side switching ■ AC-to

文件：86.82 Kbytes 页数：13 Pages

PHI

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